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Transistors / Power Field-Effect Transistors / RQ3E100GNTB
Datasheets
RQ3E100GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 10A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

Part Details for RQ3E100GNTB by ROHM Semiconductor

Results Overview of RQ3E100GNTB by ROHM Semiconductor

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RQ3E100GNTB Information

RQ3E100GNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RQ3E100GNTB

Part # Distributor Description Stock Price Buy
DISTI # 10AC8917
Newark Mosfet, N-Ch, 30V, 21A, Hsmt-8, Transistor Polarity:N Channel, Continuous Drain Current Id:21A, D... rain Source Voltage Vds:30V, On Resistance Rds(On):0.0089Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Rohm RQ3E100GNTB more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.6660
  • 10 $0.4390
  • 25 $0.3870
  • 50 $0.3350
  • 100 $0.2830
  • 300 $0.2500
  • 500 $0.2160
  • 1,000 $0.1930
$0.1930 / $0.6660 Buy Now
DISTI # RQ3E100GNTBCT-ND
DigiKey MOSFET N-CH 30V 10A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2867
In Stock
  • 1 $0.6500
  • 10 $0.4300
  • 100 $0.2774
  • 500 $0.2108
  • 1,000 $0.1893
  • 3,000 $0.1510
  • 6,000 $0.1408
  • 9,000 $0.1306
  • 15,000 $0.1285
  • 21,000 $0.1240
  • 30,000 $0.1212
$0.1212 / $0.6500 Buy Now
DISTI # 755-RQ3E100GNTB
Mouser Electronics MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant 1229
  • 1 $0.6400
  • 10 $0.4220
  • 100 $0.2720
  • 500 $0.2080
  • 1,000 $0.1860
  • 3,000 $0.1480
  • 9,000 $0.1280
  • 24,000 $0.1240
  • 45,000 $0.1210
$0.1210 / $0.6400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.1330
  • 6,000 $0.1314
  • 9,000 $0.1304
  • 12,000 $0.1298
  • 15,000 $0.1277
$0.1277 / $0.1330 Buy Now
DISTI # 69266332
Verical Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R RoHS: Compliant Min Qty: 252 Package Multiple: 1 Date Code: 1903 Americas - 3040
  • 252 $0.2050
  • 500 $0.1580
  • 1,000 $0.1410
  • 3,000 $0.1380
$0.1380 / $0.2050 Buy Now
DISTI # 63488225
Verical Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R RoHS: Compliant Min Qty: 343 Package Multiple: 1 Date Code: 2201 Americas - 3000
  • 343 $0.5096
$0.5096 Buy Now
DISTI # 65206118
Verical Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R RoHS: Compliant Min Qty: 343 Package Multiple: 1 Date Code: 2201 Americas - 2985
  • 343 $0.2289
  • 500 $0.2206
  • 1,000 $0.2134
  • 2,500 $0.2071
$0.2071 / $0.2289 Buy Now
DISTI # 59472618
Verical Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R RoHS: Compliant Min Qty: 343 Package Multiple: 1 Date Code: 2101 Americas - 366
  • 343 $0.2289
$0.2289 Buy Now
Quest Components   5080
  • 1 $0.6600
  • 607 $0.2640
  • 3,031 $0.2310
$0.2310 / $0.6600 Buy Now
Ameya Holding Limited   Min Qty: 1 328-Authorized Distributor
  • 1 $0.2704
  • 10 $0.2545
  • 25 $0.2386
  • 100 $0.2227
  • 250 $0.2068
  • 500 $0.1909
  • 1,000 $0.1750
  • 3,000 $0.1591
$0.1591 / $0.2704 Buy Now
DISTI # RQ3E100GNTB
Avnet Asia 4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE (Alt: RQ3E100GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # RQ3E100GNTB
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 3040
  • 5 $0.4860
  • 50 $0.3200
  • 100 $0.2060
  • 200 $0.2050
  • 500 $0.1580
  • 1,000 $0.1410
$0.1410 / $0.4860 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 3000
  • 1 $0.3420
  • 50 $0.2450
  • 100 $0.1860
  • 300 $0.1460
  • 500 $0.1380
  • 1,000 $0.1320
$0.1320 / $0.3420 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 2985
  • 1 $0.3420
  • 50 $0.2450
  • 100 $0.1860
  • 300 $0.1460
  • 500 $0.1380
  • 1,000 $0.1320
$0.1320 / $0.3420 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 366
  • 1 $0.3420
  • 50 $0.2450
  • 100 $0.1860
  • 300 $0.1460
  • 500 $0.1380
  • 1,000 $0.1320
$0.1320 / $0.3420 Buy Now

Part Details for RQ3E100GNTB

RQ3E100GNTB CAD Models

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RQ3E100GNTB Part Data Attributes

Parametric Data
RQ3E100GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ3E100GNTB ROHM Semiconductor Power Field-Effect Transistor, 10A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.0157 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

RQ3E100GNTB Related Parts

RQ3E100GNTB Frequently Asked Questions (FAQ)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. ROHM also recommends using a thermistor or thermocouple to monitor the temperature and adjust the operating conditions accordingly.

  • ROHM recommends using a low-ESR ceramic capacitor with a value between 1uF to 10uF, depending on the specific application requirements. The capacitor should be placed as close to the VIN pin as possible to minimize noise and ensure stable operation.

  • To prevent EOS and ESD damage, follow proper handling and storage procedures for the device. Use an ESD wrist strap or mat when handling the device, and ensure that the PCB is designed with ESD protection components, such as TVS diodes or ESD arrays, to protect the device from voltage transients.

  • ROHM recommends using a low-ESR ceramic capacitor with a value between 1uF to 10uF, depending on the specific application requirements. The capacitor should be placed as close to the VOUT pin as possible to minimize noise and ensure stable operation.