Datasheets
RP1H065SPTR by: ROHM Semiconductor

Power Field-Effect Transistor, 6.5A I(D), 45V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

Part Details for RP1H065SPTR by ROHM Semiconductor

Overview of RP1H065SPTR by ROHM Semiconductor

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Price & Stock for RP1H065SPTR

Part # Distributor Description Stock Price Buy
DISTI # RP1H065SPTR
Avnet Americas Transistor MOSFET P-Channel 45V 6.5A 6-Pin MPT T/R - Tape and Reel (Alt: RP1H065SPTR) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ

Part Details for RP1H065SPTR

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RP1H065SPTR Part Data Attributes

RP1H065SPTR ROHM Semiconductor
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RP1H065SPTR ROHM Semiconductor Power Field-Effect Transistor, 6.5A I(D), 45V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 45 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 26 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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