Part Details for RP1E050RPTR by ROHM Semiconductor
Overview of RP1E050RPTR by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for RP1E050RPTR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
RP1E050RPTR
|
Avnet Americas | Transistor MOSFET P-Channel 30V 5A 6-Pin MPT T/R - Tape and Reel (Alt: RP1E050RPTR) Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
RFQ | |
|
DISTI #
30598401
|
Verical | Trans MOSFET P-CH Si 30V 5A 6-Pin MPT T/R RoHS: Compliant Min Qty: 34 Package Multiple: 1 | Americas - 481 |
|
$0.7700 / $0.9213 | Buy Now |
|
DISTI #
C1S625900678913
|
Chip1Stop | Trans MOSFET P-CH Si 30V 5A 6-Pin MPT T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 481 |
|
$0.6880 / $0.8730 | Buy Now |
Part Details for RP1E050RPTR
RP1E050RPTR CAD Models
RP1E050RPTR Part Data Attributes
|
|
RP1E050RPTR
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RP1E050RPTR
ROHM Semiconductor
Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-F6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e2 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |