Part Details for RN2605(TE85L,F) by Toshiba America Electronic Components
Results Overview of RN2605(TE85L,F) by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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RN2605(TE85L,F) Information
RN2605(TE85L,F) by Toshiba America Electronic Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RN2605(TE85L,F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RN2605(TE85LF)CT-ND
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DigiKey | TRANS 2PNP PREBIAS 0.3W SM6 Min Qty: 1 Lead time: 40 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6012 In Stock |
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$0.0525 / $0.3700 | Buy Now |
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DISTI #
757-RN2605TE85LF
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Mouser Electronics | Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz RoHS: Compliant | 1500 |
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$0.0600 / $0.3200 | Buy Now |
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DISTI #
RN2605(TE85L,F)
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EBV Elektronik | (Alt: RN2605(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for RN2605(TE85L,F)
RN2605(TE85L,F) CAD Models
RN2605(TE85L,F) Part Data Attributes
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RN2605(TE85L,F)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
RN2605(TE85L,F)
Toshiba America Electronic Components
TRANS 2PNP PREBIAS 0.3W SM6
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Samacsys Manufacturer | Toshiba | |
| Additional Feature | BUILT-IN RESISTOR RATIO IS 21.36 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.3 W | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| VCEsat-Max | 0.3 V |