Datasheets
RN2301(TE85L,F) by: Toshiba America Electronic Components

TRANSISTOR PNP 50V 0.1A SC-70

Part Details for RN2301(TE85L,F) by Toshiba America Electronic Components

Overview of RN2301(TE85L,F) by Toshiba America Electronic Components

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for RN2301(TE85L,F)

Part # Distributor Description Stock Price Buy
DISTI # RN2301(TE85L,F)
Avnet Americas Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN2301(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ

Part Details for RN2301(TE85L,F)

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RN2301(TE85L,F) Part Data Attributes

RN2301(TE85L,F) Toshiba America Electronic Components
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RN2301(TE85L,F) Toshiba America Electronic Components TRANSISTOR PNP 50V 0.1A SC-70
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT IN BAIS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.1 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz

Alternate Parts for RN2301(TE85L,F)

This table gives cross-reference parts and alternative options found for RN2301(TE85L,F). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN2301(TE85L,F), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FJX3008RTF NPN Epitaxial Silicon Transistor with Bias Resistor, 3000-REEL onsemi RN2301(TE85L,F) vs FJX3008RTF
MUN5111DW1T1G Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi RN2301(TE85L,F) vs MUN5111DW1T1G
PDTA144TE,115 PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-75 3-Pin NXP Semiconductors RN2301(TE85L,F) vs PDTA144TE,115
MUN2237T1G NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL onsemi RN2301(TE85L,F) vs MUN2237T1G
BCR183E6327HTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Infineon Technologies AG RN2301(TE85L,F) vs BCR183E6327HTSA1
RN2401S,LF(D X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ Toshiba America Electronic Components RN2301(TE85L,F) vs RN2401S,LF(D
BCR169S Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-363, 6 PIN Infineon Technologies AG RN2301(TE85L,F) vs BCR169S
MSC2712YT1G NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL onsemi RN2301(TE85L,F) vs MSC2712YT1G
BCR183E6433HTMA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Infineon Technologies AG RN2301(TE85L,F) vs BCR183E6433HTMA1
MUN2237T1 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN onsemi RN2301(TE85L,F) vs MUN2237T1

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