Part Details for RN2101FV by Toshiba America Electronic Components
Overview of RN2101FV by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for RN2101FV
RN2101FV CAD Models
RN2101FV Part Data Attributes
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RN2101FV
Toshiba America Electronic Components
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Datasheet
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RN2101FV
Toshiba America Electronic Components
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz |
Alternate Parts for RN2101FV
This table gives cross-reference parts and alternative options found for RN2101FV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN2101FV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FJNS4202R | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Fairchild Semiconductor Corporation | RN2101FV vs FJNS4202R |
DTA114ESA | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, 3 PIN | ROHM Semiconductor | RN2101FV vs DTA114ESA |
DMA56406 | Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN | Panasonic Electronic Components | RN2101FV vs DMA56406 |
KRA301 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN | KEC | RN2101FV vs KRA301 |
RN2301(TE85L2) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal | Toshiba America Electronic Components | RN2101FV vs RN2301(TE85L2) |
BRC144EMP | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 | Renesas Electronics Corporation | RN2101FV vs BRC144EMP |
DTA114ESA | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon | Jiangsu Changjiang Electronics Technology Co Ltd | RN2101FV vs DTA114ESA |
KSR2105TI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Samsung Semiconductor | RN2101FV vs KSR2105TI |
RN1301(TE85L,F) | TRANSISTOR NPN 50V 0.1A SC-70 | Toshiba America Electronic Components | RN2101FV vs RN1301(TE85L,F) |
UN211N | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN | Panasonic Electronic Components | RN2101FV vs UN211N |