Part Details for RN1902,LF(CB by Toshiba America Electronic Components
Overview of RN1902,LF(CB by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for RN1902,LF(CB
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
64957476
|
Verical | RN1902,LF(CB Min Qty: 538 Package Multiple: 1 Date Code: 2201 | Americas - 29900 |
|
$0.1224 / $0.1405 | Buy Now |
|
|
Quest Components | 23920 |
|
$0.0795 / $0.5300 | Buy Now | |
|
|
CHIPMALL.COM LIMITED | 29900 |
|
$0.0796 / $0.1306 | Buy Now |
Part Details for RN1902,LF(CB
RN1902,LF(CB CAD Models
RN1902,LF(CB Part Data Attributes
|
|
RN1902,LF(CB
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
RN1902,LF(CB
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | BUILT-IN BIAS RESISTOR IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 50 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.3 V |