Datasheets
RN1709JE(TE85L,F) by: Toshiba America Electronic Components

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

Part Details for RN1709JE(TE85L,F) by Toshiba America Electronic Components

Overview of RN1709JE(TE85L,F) by Toshiba America Electronic Components

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Energy and Power Systems Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Price & Stock for RN1709JE(TE85L,F)

Part # Distributor Description Stock Price Buy
DISTI # 264-RN1709JE(TE85LF)CT-ND
DigiKey NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.3800
  • 4,000 $0.0704
  • 8,000 $0.0673
  • 12,000 $0.0582
  • 28,000 $0.0571
  • 100,000 $0.0473
  • 200,000 $0.0465
$0.0465 / $0.3800 Buy Now
DISTI # 757-RN1709JETE85LF
Mouser Electronics Digital Transistors NPN x 2 BRT SOT-553 50V RoHS: Compliant 0
  • 1 $0.3900
  • 10 $0.2740
  • 100 $0.1130
  • 1,000 $0.0710
  • 4,000 $0.0700
  • 8,000 $0.0580
  • 24,000 $0.0540
  • 48,000 $0.0480
  • 100,000 $0.0460
$0.0460 / $0.3900 Order Now

Part Details for RN1709JE(TE85L,F)

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RN1709JE(TE85L,F) Part Data Attributes

RN1709JE(TE85L,F) Toshiba America Electronic Components
Buy Now Datasheet
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RN1709JE(TE85L,F) Toshiba America Electronic Components PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 70
Number of Elements 2
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.1 W
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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