Part Details for RN1406,LF(T by Toshiba America Electronic Components
Overview of RN1406,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for RN1406,LF(T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84365869
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Verical | Trans Digital BJT NPN 50V 100mA 200mW 3-Pin S-Mini T/R RoHS: Compliant Min Qty: 613 Package Multiple: 1 Date Code: 2426 | Americas - 2800 |
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$0.0411 / $0.0510 | Buy Now |
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DISTI #
C1S751200919435
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Chip1Stop | Pre-Biased Bipolar Transistor RoHS: Compliant pbFree: Yes Container: Cut Tape | 2850 |
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$0.0329 / $0.1150 | Buy Now |
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CHIPMALL.COM LIMITED | 150 |
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$0.1109 | Buy Now | |
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DISTI #
RN1406,LF(T
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EBV Elektronik | Trans Digital BJT NPN 50V 100mA 3-Pin TO-236MOD (Alt: RN1406,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for RN1406,LF(T
RN1406,LF(T CAD Models
RN1406,LF(T Part Data Attributes
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RN1406,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
RN1406,LF(T
Toshiba America Electronic Components
Small Signal Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Samacsys Manufacturer | Toshiba | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.3 V |