Part Details for RN1308,LF(B by Toshiba America Electronic Components
Overview of RN1308,LF(B by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Price & Stock for RN1308,LF(B
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
73552472
|
Verical | RN1308,LF(B Min Qty: 1112 Package Multiple: 1 Date Code: 2301 | Americas - 1858 |
|
$0.0658 | Buy Now |
|
|
Quest Components | 1486 |
|
$0.0960 / $0.3200 | Buy Now |
Part Details for RN1308,LF(B
RN1308,LF(B CAD Models
RN1308,LF(B Part Data Attributes
|
|
RN1308,LF(B
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
RN1308,LF(B
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 2.14 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.1 W | |
| Power Dissipation-Max (Abs) | 0.1 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.3 V |