Datasheets
RN1107F by: Toshiba America Electronic Components

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal

Part Details for RN1107F by Toshiba America Electronic Components

Overview of RN1107F by Toshiba America Electronic Components

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Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

Part Details for RN1107F

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RN1107F Part Data Attributes

RN1107F Toshiba America Electronic Components
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RN1107F Toshiba America Electronic Components TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-F3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-F3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

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