Part Details for RN1107F by Toshiba America Electronic Components
Overview of RN1107F by Toshiba America Electronic Components
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Part Details for RN1107F
RN1107F CAD Models
RN1107F Part Data Attributes
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RN1107F
Toshiba America Electronic Components
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RN1107F
Toshiba America Electronic Components
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-PDSO-F3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |