Part Details for RN1101MFV,L3F by Toshiba America Electronic Components
Overview of RN1101MFV,L3F by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for RN1101MFV,L3F
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
RN1101MFVL3FTR-ND
|
DigiKey | TRANS PREBIAS NPN 50V 0.1A VESM Min Qty: 8000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
|
$0.0142 / $0.0240 | Buy Now |
Part Details for RN1101MFV,L3F
RN1101MFV,L3F CAD Models
RN1101MFV,L3F Part Data Attributes
|
RN1101MFV,L3F
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
RN1101MFV,L3F
Toshiba America Electronic Components
TRANS PREBIAS NPN 50V SOT723
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 0.7 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.15 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
VCEsat-Max | 0.3 V |