Part Details for RM40P40LD by Rectron Semiconductor
Results Overview of RM40P40LD by Rectron Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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RM40P40LD Information
RM40P40LD by Rectron Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RM40P40LD
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2516-RM40P40LDTR-ND
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DigiKey | MOSFET P-CHANNEL 40V 40A TO252-2 Min Qty: 2432 Lead time: 14 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT |
2432 In Stock |
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$0.6200 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - P-Channel - 40V Drain-Source Breakdown Voltage - 40A Drain Current... more RoHS: Compliant |
2484 In Stock |
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$0.2561 / $0.3521 | Buy Now |
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Master Electronics | MOSFET (Metal Oxide) Transistor - P-Channel - 40V Drain-Source Breakdown Voltage - 40A Drain Current... more RoHS: Compliant |
2484 In Stock |
|
$0.2561 / $0.3521 | Buy Now |
Part Details for RM40P40LD
RM40P40LD CAD Models
RM40P40LD Part Data Attributes
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RM40P40LD
Rectron Semiconductor
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Datasheet
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RM40P40LD
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | RECTRON LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Rectron | |
Avalanche Energy Rating (Eas) | 544 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 310 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PDSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |