Datasheets
RM40P40LD by: Rectron Semiconductor

Power Field-Effect Transistor,

Part Details for RM40P40LD by Rectron Semiconductor

Results Overview of RM40P40LD by Rectron Semiconductor

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RM40P40LD Information

RM40P40LD by Rectron Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RM40P40LD

Part # Distributor Description Stock Price Buy
DISTI # 2516-RM40P40LDTR-ND
DigiKey MOSFET P-CHANNEL 40V 40A TO252-2 Min Qty: 2432 Lead time: 14 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT 2432
In Stock
  • 2,432 $0.6200
$0.6200 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - P-Channel - 40V Drain-Source Breakdown Voltage - 40A Drain Current... - TO-252-2 Package - SMD/SMT Mounting. more RoHS: Compliant 2484 In Stock
  • 1 $0.3521
  • 2,500 $0.3201
  • 5,000 $0.3079
  • 7,500 $0.3033
  • 10,000 $0.2987
  • 15,000 $0.2942
  • 25,000 $0.2600
  • 50,000 $0.2561
$0.2561 / $0.3521 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - P-Channel - 40V Drain-Source Breakdown Voltage - 40A Drain Current... - TO-252-2 Package - SMD/SMT Mounting. more RoHS: Compliant 2484 In Stock
  • 1 $0.3521
  • 2,500 $0.3201
  • 5,000 $0.3079
  • 7,500 $0.3033
  • 10,000 $0.2987
  • 15,000 $0.2942
  • 25,000 $0.2600
  • 50,000 $0.2561
$0.2561 / $0.3521 Buy Now

Part Details for RM40P40LD

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RM40P40LD Part Data Attributes

RM40P40LD Rectron Semiconductor
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RM40P40LD Rectron Semiconductor Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RECTRON LTD
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Rectron
Avalanche Energy Rating (Eas) 544 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON