Part Details for RJH1DF7RDPQ-80#T2 by Renesas Electronics Corporation
Overview of RJH1DF7RDPQ-80#T2 by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RJH1DF7RDPQ-80#T2 | Renesas Electronics Corporation | IGBT for IH |
Price & Stock for RJH1DF7RDPQ-80#T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
RJH1DF7RDPQ-80#T2
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Avnet Americas | Transistor IGBT Chip N-CH 1350V 60A 3-Pin TO-247 Box - Rail/Tube (Alt: RJH1DF7RDPQ-80#T2) RoHS: Compliant Min Qty: 65 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 400 Partner Stock |
|
$5.6600 | Buy Now |
|
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Rochester Electronics | RJH1DF7 - Insulated Gate Bipolar Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 400 |
|
$4.8100 / $5.6600 | Buy Now |
Part Details for RJH1DF7RDPQ-80#T2
RJH1DF7RDPQ-80#T2 CAD Models
RJH1DF7RDPQ-80#T2 Part Data Attributes
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RJH1DF7RDPQ-80#T2
Renesas Electronics Corporation
Buy Now
Datasheet
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RJH1DF7RDPQ-80#T2
Renesas Electronics Corporation
IGBT for IH, , /
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | TO-247, 3 PIN | |
| Manufacturer Package Code | PRSS0003ZE | |
| Reach Compliance Code | compliant | |
| ECCN Code | 5A002 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 1350 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 352 ns | |
| Turn-on Time-Nom (ton) | 136 ns | |
| VCEsat-Max | 2.55 V |