Datasheets
RFP50N06LE by:

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for RFP50N06LE by Harris Semiconductor

Overview of RFP50N06LE by Harris Semiconductor

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Part Details for RFP50N06LE

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RFP50N06LE Part Data Attributes

RFP50N06LE Harris Semiconductor
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RFP50N06LE Harris Semiconductor Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 145 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP50N06LE

This table gives cross-reference parts and alternative options found for RFP50N06LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP50N06LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP50N06LE 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP50N06LE vs RFP50N06LE
RFP50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP50N06LE vs RFP50N06LE
Part Number Description Manufacturer Compare
RFP15N08L 15A, 80V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP50N06LE vs RFP15N08L
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, TO-220-3, 800-TUBE onsemi RFP50N06LE vs RFP70N06
SPP70N10L Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG RFP50N06LE vs SPP70N10L
RFP70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06LE vs RFP70N06
RFP2N20L Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06LE vs RFP2N20L
SSP1N60A Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation RFP50N06LE vs SSP1N60A
RFP25N05 25A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP50N06LE vs RFP25N05
RFG50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation RFP50N06LE vs RFG50N06
RFP50N06LE 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP50N06LE vs RFP50N06LE
RFP4N06 Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP50N06LE vs RFP4N06

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