Datasheets
RFP45N06 by:

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for RFP45N06 by Harris Semiconductor

Overview of RFP45N06 by Harris Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for RFP45N06

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 103
  • 1 $1.4400
  • 14 $0.8640
  • 59 $0.6720
$0.6720 / $1.4400 Buy Now

Part Details for RFP45N06

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RFP45N06 Part Data Attributes

RFP45N06 Harris Semiconductor
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RFP45N06 Harris Semiconductor Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 131 W
Power Dissipation-Max (Abs) 131 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 120 ns

Alternate Parts for RFP45N06

This table gives cross-reference parts and alternative options found for RFP45N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP45N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP45N06 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP45N06 vs RFP45N06
RFP45N06_NL 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP45N06 vs RFP45N06_NL
RFP45N06 Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP45N06 vs RFP45N06
RFP45N06_NL Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP45N06 vs RFP45N06_NL
Part Number Description Manufacturer Compare
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE onsemi RFP45N06 vs RFP70N06
RFP8P06LE Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP45N06 vs RFP8P06LE
RFP2N12L 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP45N06 vs RFP2N12L
RFP45N06_NL 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP45N06 vs RFP45N06_NL
RFG70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Harris Semiconductor RFP45N06 vs RFG70N06
RFP70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP45N06 vs RFP70N06
RFP15P06 15A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP45N06 vs RFP15P06
RFP12N06RLE Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP45N06 vs RFP12N06RLE
SPW47N60S5 Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC, TO-247, 3 PIN Infineon Technologies AG RFP45N06 vs SPW47N60S5
SMW70N06-14 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Vishay Siliconix RFP45N06 vs SMW70N06-14

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