We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / Power Field-Effect Transistors / RFP45N02L
Datasheets
RFP45N02L by:
Harris Semiconductor
Harris Semiconductor
Intersil Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for RFP45N02L by Harris Semiconductor

Results Overview of RFP45N02L by Harris Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

RFP45N02L Information

RFP45N02L by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RFP45N02L

Part # Distributor Description Stock Price Buy
DISTI # 2156-RFP45N02L-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 606 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1871
In Stock
  • 606 $0.5000
$0.5000 Buy Now
Rochester Electronics 45A, 20V, N-Channel Logic Level MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 1871
  • 1 $0.4767
  • 25 $0.4672
  • 100 $0.4481
  • 500 $0.4290
  • 1,000 $0.4052
$0.4052 / $0.4767 Buy Now

Part Details for RFP45N02L

RFP45N02L CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

RFP45N02L Part Data Attributes

Parametric Data
RFP45N02L Harris Semiconductor
Buy Now Datasheet
Compare Parts:
RFP45N02L Harris Semiconductor Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

RFP45N02L Frequently Asked Questions (FAQ)

  • The thermal resistance of the RFP45N02L is typically around 1.5°C/W for junction-to-case and 40°C/W for junction-to-ambient, but this can vary depending on the specific application and cooling conditions.

  • Yes, the RFP45N02L is suitable for high-frequency switching applications up to 1 MHz, but you should ensure that the device is properly biased and that the layout is optimized to minimize parasitic inductance and capacitance.

  • To protect the RFP45N02L from ESD, you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and ensure that the device is properly grounded during assembly and testing.

  • The recommended gate drive voltage for the RFP45N02L is typically between 10V and 15V, but this can vary depending on the specific application and the desired switching performance.

  • Yes, you can use multiple RFP45N02L devices in parallel to increase current handling, but you should ensure that the devices are properly matched and that the layout is optimized to minimize current imbalance and thermal gradients.