Datasheets
RFP25N05 by:

Power Field-Effect Transistor, 25A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for RFP25N05 by Harris Semiconductor

Overview of RFP25N05 by Harris Semiconductor

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Price & Stock for RFP25N05

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 1
  • 1 $7.4400
$7.4400 Buy Now

Part Details for RFP25N05

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RFP25N05 Part Data Attributes:

RFP25N05 Harris Semiconductor
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RFP25N05 Harris Semiconductor Power Field-Effect Transistor, 25A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 72 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 65 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Alternate Parts for RFP25N05

This table gives cross-reference parts and alternative options found for RFP25N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP25N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP25N05 25A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP25N05 vs RFP25N05
Part Number Description Manufacturer Compare
RFP12N10L 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP25N05 vs RFP12N10L
SSP1N60A Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation RFP25N05 vs SSP1N60A
RFP50N06_NL Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP25N05 vs RFP50N06_NL
RFG50N05L Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor RFP25N05 vs RFG50N05L
RFP50N06LE 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP25N05 vs RFP50N06LE
RFP4N05 4A, 50V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP25N05 vs RFP4N05
SSF6N80A Power Field-Effect Transistor, 4.5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Samsung Semiconductor RFP25N05 vs SSF6N80A
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP25N05 vs RFP8P05
RFP15P06 Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP25N05 vs RFP15P06
RFG40N10LE 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation RFP25N05 vs RFG40N10LE

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