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Overview of RFM10N12 by Harris Semiconductor
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- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for RFM10N12 by Harris Semiconductor
Part Data Attributes for RFM10N12 by Harris Semiconductor
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|---|---|
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Rohs Code
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No
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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HARRIS SEMICONDUCTOR
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Package Description
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FLANGE MOUNT, O-MBFM-P2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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120 V
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Drain Current-Max (ID)
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10 A
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Drain-source On Resistance-Max
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0.3 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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100 pF
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JEDEC-95 Code
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TO-204AA
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JESD-30 Code
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O-MBFM-P2
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JESD-609 Code
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e0
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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75 W
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Power Dissipation-Max (Abs)
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75 W
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Pulsed Drain Current-Max (IDM)
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25 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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TIN LEAD
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Terminal Form
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PIN/PEG
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Terminal Position
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BOTTOM
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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270 ns
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Turn-on Time-Max (ton)
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310 ns
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