Part Details for RFD8P06LESM9A by Harris Semiconductor
Overview of RFD8P06LESM9A by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Part Details for RFD8P06LESM9A
RFD8P06LESM9A CAD Models
RFD8P06LESM9A Part Data Attributes
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RFD8P06LESM9A
Harris Semiconductor
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Datasheet
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RFD8P06LESM9A
Harris Semiconductor
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD8P06LESM9A
This table gives cross-reference parts and alternative options found for RFD8P06LESM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD8P06LESM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| RFD8P06LESM9A | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD8P06LESM9A vs RFD8P06LESM9A |
| RFD8P06LESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | RFD8P06LESM9A vs RFD8P06LESM9A |
| RFD8P06LESM | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD8P06LESM9A vs RFD8P06LESM |
| RFD8P06LESM9A | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN | Rochester Electronics LLC | RFD8P06LESM9A vs RFD8P06LESM9A |