Part Details for RFD8P06LE by Fairchild Semiconductor Corporation
Overview of RFD8P06LE by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD8P06LE
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFD8P06LE-ND
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DigiKey | P-CHANNEL POWER MOSFET Min Qty: 919 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
7200 In Stock |
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$0.3300 | Buy Now |
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Rochester Electronics | RFD8P06 - 8A, 60V, 0.33ohm, P-Channel Power MOSFET, TO-251AA ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 7200 |
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$0.2804 / $0.3299 | Buy Now |
Part Details for RFD8P06LE
RFD8P06LE CAD Models
RFD8P06LE Part Data Attributes
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RFD8P06LE
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
RFD8P06LE
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.33 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RFD8P06LE
This table gives cross-reference parts and alternative options found for RFD8P06LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD8P06LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFD8P06LE | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD8P06LE vs RFD8P06LE |
RFD8P06LE | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | RFD8P06LE vs RFD8P06LE |
RFD8P06LE | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFD8P06LE vs RFD8P06LE |