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Transistors Power Field-Effect Transistors RFD3055LESM

RFD3055LESM
Description: Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Overview of RFD3055LESM by Fairchild Semiconductor Corporation

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Price & Stock for RFD3055LESM by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-252AA 27
  • 1 $0.6900
  • 8 $0.5750
$0.5750 / $0.6900 Buy Now
ComSIT USA 11A, 60V, 0.107 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant Stock EU - 1050
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

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Part Data Attributes for RFD3055LESM by Fairchild Semiconductor Corporation
Parametric Data

RFD3055LESM
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.107 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
38 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. RFD3055LESM
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
    VS

Alternate Parts for RFD3055LESM

This table gives cross-reference parts and alternative options found for RFD3055LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD3055LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFD3055LESM9A Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD3055LESM vs RFD3055LESM9A
RFD3055LESM 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD3055LESM vs RFD3055LESM
RFD3055LESM Power Field-Effect Transistor, Rochester Electronics LLC RFD3055LESM vs RFD3055LESM
RFD3055LESM Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD3055LESM vs RFD3055LESM
RFD3055LESM9A_NL Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD3055LESM vs RFD3055LESM9A_NL
Part Number Description Manufacturer Compare
RFD3055LESM9A_NL Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD3055LESM vs RFD3055LESM9A_NL
RFD3055LESM 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD3055LESM vs RFD3055LESM
RFD3055LESM9A Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD3055LESM vs RFD3055LESM9A

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