Part Details for RFD3055LE by Intersil Corporation
Overview of RFD3055LE by Intersil Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD3055LE
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 415 |
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RFQ |
Part Details for RFD3055LE
RFD3055LE CAD Models
RFD3055LE Part Data Attributes:
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RFD3055LE
Intersil Corporation
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Datasheet
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RFD3055LE
Intersil Corporation
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Power Dissipation-Max (Abs) | 38 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 120 ns |
Alternate Parts for RFD3055LE
This table gives cross-reference parts and alternative options found for RFD3055LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD3055LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD3055LE vs RFD3055 |
| RFD3055LE | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD3055LE vs RFD3055LE |
| RFD3055 | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN | Intersil Corporation | RFD3055LE vs RFD3055 |
| RFD3055LE | N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ, 1800-TUBE | onsemi | RFD3055LE vs RFD3055LE |
| RFD3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Fairchild Semiconductor Corporation | RFD3055LE vs RFD3055 |