Datasheets
RFD3055 by:

12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN

Part Details for RFD3055 by Intersil Corporation

Overview of RFD3055 by Intersil Corporation

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Part Details for RFD3055

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RFD3055 Part Data Attributes:

RFD3055 Intersil Corporation
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RFD3055 Intersil Corporation 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Part Package Code TO-251AA
Package Description TO-251AA, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 53 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD3055

This table gives cross-reference parts and alternative options found for RFD3055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD3055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD3055LE 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD3055 vs RFD3055LE
RFD3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD3055 vs RFD3055
RFD3055LE Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD3055 vs RFD3055LE
RFD3055LE N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ, 1800-TUBE onsemi RFD3055 vs RFD3055LE
RFD3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation RFD3055 vs RFD3055
Part Number Description Manufacturer Compare
RFD3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation RFD3055 vs RFD3055
RFD3055LE N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ, 1800-TUBE onsemi RFD3055 vs RFD3055LE
RFD3055LE 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD3055 vs RFD3055LE
RFD3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD3055 vs RFD3055
RFD3055LE Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD3055 vs RFD3055LE

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