Part Details for RFD16N05LSM by Harris Semiconductor
Overview of RFD16N05LSM by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD16N05LSM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 897 |
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$1.6954 / $3.0825 | Buy Now |
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Quest Components | 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 146 |
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$1.9009 / $3.0825 | Buy Now |
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Rochester Electronics | RFD16N05 - 16A, 50V, 0.056ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1356 |
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$0.5125 / $0.6029 | Buy Now |
Part Details for RFD16N05LSM
RFD16N05LSM CAD Models
RFD16N05LSM Part Data Attributes
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RFD16N05LSM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD16N05LSM
Harris Semiconductor
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MEGAFET, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD16N05LSM
This table gives cross-reference parts and alternative options found for RFD16N05LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD16N05LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD16N05LSM | N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 1800/RAIL | Fairchild Semiconductor Corporation | RFD16N05LSM vs RFD16N05LSM |
| RFD16N05LSM9A | 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN | Rochester Electronics LLC | RFD16N05LSM vs RFD16N05LSM9A |
| SMU25N05-45L | Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Temic Semiconductors | RFD16N05LSM vs SMU25N05-45L |
| RFD16N05LSM9A | N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ, 2500-REEL | onsemi | RFD16N05LSM vs RFD16N05LSM9A |
| RFD16N05L | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN | Fairchild Semiconductor Corporation | RFD16N05LSM vs RFD16N05L |
| RFD16N05L | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD16N05LSM vs RFD16N05L |
| SMD25N05-45L | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | RFD16N05LSM vs SMD25N05-45L |
| RFD16N05LSM9A | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | RFD16N05LSM vs RFD16N05LSM9A |