Part Details for RFD16N05LSM by Fairchild Semiconductor Corporation
Overview of RFD16N05LSM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD16N05LSM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1120 |
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RFQ | ||
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Quest Components | 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 269 |
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$1.3358 / $3.0825 | Buy Now |
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ComSIT USA | 16A, 50V, 0.047 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | Europe - 690 |
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RFQ |
Part Details for RFD16N05LSM
RFD16N05LSM CAD Models
RFD16N05LSM Part Data Attributes:
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RFD16N05LSM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
RFD16N05LSM
Fairchild Semiconductor Corporation
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 1800/RAIL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | TO-252AA, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MEGAFET | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD16N05LSM
This table gives cross-reference parts and alternative options found for RFD16N05LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD16N05LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD16N05LSM9A | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD16N05LSM vs RFD16N05LSM9A |
| RFD16N05L | 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFD16N05LSM vs RFD16N05L |
| SMD25N05-45L | Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Temic Semiconductors | RFD16N05LSM vs SMD25N05-45L |
| RFD16N05LSM | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD16N05LSM vs RFD16N05LSM |
| SMD25N05-45L | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | RFD16N05LSM vs SMD25N05-45L |
| RFD16N05LSM | 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD16N05LSM vs RFD16N05LSM |