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Transistors / Power Field-Effect Transistors / RFD14N05SM9A
Datasheets
RFD14N05SM9A by:
onsemi
Fairchild Semiconductor Corporation
Harris Semiconductor
Hongxing Electrical Ltd
Intersil Corporation
onsemi
Rochester Electronics LLC
Not Found

N-Channel Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL

Part Details for RFD14N05SM9A by onsemi

Results Overview of RFD14N05SM9A by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Space Technology Aerospace and Defense Energy and Power Systems

RFD14N05SM9A Information

RFD14N05SM9A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RFD14N05SM9A

Part # Distributor Description Stock Price Buy
DISTI # 31Y4003
Newark Mosfet Transistor, N Channel, 14 A, 50 V, 100 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi RFD14N05SM... 9A more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2684
  • 1 $1.4400
  • 10 $0.9980
  • 25 $0.9120
  • 50 $0.8250
  • 100 $0.7390
  • 250 $0.6820
$0.6820 / $1.4400 Buy Now
DISTI # 05B7457
Newark N Channel Mosfet, 50V, 14Ma, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:50V, Con... tinuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi RFD14N05SM9A more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4390
  • 3,000 $0.4210
  • 6,000 $0.3830
  • 12,000 $0.3440
  • 18,000 $0.3320
  • 30,000 $0.3240
$0.3240 / $0.4390 Buy Now
DISTI # RFD14N05SM9ACT-ND
DigiKey MOSFET N-CH 50V 14A TO252AA Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6120
In Stock
  • 1 $1.3500
  • 10 $0.8520
  • 100 $0.5648
  • 500 $0.4414
  • 1,000 $0.4017
  • 2,500 $0.3587
  • 5,000 $0.3244
  • 7,500 $0.3186
  • 12,500 $0.3185
$0.3185 / $1.3500 Buy Now
DISTI # RFD14N05SM9A
Avnet Americas Trans MOSFET N-CH 50V 14A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: RFD14N05SM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3107
  • 5,000 $0.3070
  • 10,000 $0.3033
  • 15,000 $0.3019
  • 20,000 $0.2998
$0.2998 / $0.3107 Buy Now
DISTI # 512-RFD14N05SM9A
Mouser Electronics MOSFETs TO-252 RoHS: Compliant 16956
  • 1 $1.2100
  • 10 $0.7880
  • 25 $0.7870
  • 100 $0.5580
  • 500 $0.4420
  • 1,000 $0.3930
  • 2,500 $0.3510
  • 5,000 $0.3240
$0.3240 / $1.2100 Buy Now
DISTI # E02:0323_00846941
Arrow Electronics Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks Date Code: 2433 Europe - 2500
  • 2,500 $0.3450
  • 5,000 $0.3301
$0.3301 / $0.3450 Buy Now
Future Electronics N-Channel 50 V 0.1 Ohm Surface Mount Power Mosfet TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel 0
Reel
  • 2,500 $0.3150
  • 5,000 $0.3100
  • 7,500 $0.3050
  • 12,500 $0.3000
$0.3000 / $0.3150 Buy Now
Future Electronics N-Channel 50 V 0.1 Ohm Surface Mount Power Mosfet TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks Container: Reel 0
Reel
  • 2,500 $0.3150
  • 5,000 $0.3100
  • 7,500 $0.3050
  • 12,500 $0.3000
$0.3000 / $0.3150 Buy Now
Onlinecomponents.com N-Channel Power MOSFET 50V, 14A, 100mΩ RoHS: Compliant 0
  • 2,500 $0.3309
  • 5,000 $0.3225
  • 7,500 $0.3177
  • 10,000 $0.3129
  • 15,000 $0.3082
  • 25,000 $0.3036
$0.3036 / $0.3309 Buy Now
DISTI # 84470370
Verical Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2433 Americas - 2500
  • 2,500 $0.3358
  • 5,000 $0.3213
$0.3213 / $0.3358 Buy Now
Bristol Electronics   Min Qty: 6 295
  • 6 $0.9375
  • 23 $0.6094
  • 84 $0.3516
  • 286 $0.3000
$0.3000 / $0.9375 Buy Now
Quest Components 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 236
  • 1 $1.2500
  • 21 $0.6250
  • 97 $0.3750
$0.3750 / $1.2500 Buy Now
DISTI # RFD14N05SM9A
TME Transistor: N-MOSFET, unipolar, 50V, 14A, 48W, DPAK Min Qty: 1 8049
  • 1 $1.4160
  • 5 $0.6190
  • 25 $0.4960
  • 100 $0.4460
  • 500 $0.4170
$0.4170 / $1.4160 Buy Now
DISTI # RFD14N05SM9A
IBS Electronics N-CHANNEL POWER MOSFET 50V 14A 100M&#x3A9, Min Qty: 2500 Package Multiple: 1 0
  • 2,500 $0.4123
  • 5,000 $0.4057
  • 7,500 $0.4057
  • 10,000 $0.4057
  • 12,500 $0.3990
$0.3990 / $0.4123 Buy Now
DISTI # RFD14N05SM9A
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3200
$0.3200 Buy Now
Chip 1 Exchange INSTOCK 500
RFQ
DISTI # RFD14N05SM9A
Avnet Asia Trans MOSFET N-CH 50V 14A 3-Pin(2+Tab) DPAK T/R (Alt: RFD14N05SM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days 0
  • 2,500 $0.3353
  • 5,000 $0.3309
  • 7,500 $0.3267
  • 12,500 $0.3225
  • 25,000 $0.3146
  • 62,500 $0.3070
  • 125,000 $0.2998
$0.2998 / $0.3353 Buy Now
DISTI # RFD14N05SM9A
Avnet Silica Trans MOSFET NCH 50V 14A 3Pin2Tab DPAK TR (Alt: RFD14N05SM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # RFD14N05SM9A
EBV Elektronik Trans MOSFET NCH 50V 14A 3Pin2Tab DPAK TR (Alt: RFD14N05SM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now

Part Details for RFD14N05SM9A

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RFD14N05SM9A Part Data Attributes

Parametric Data
RFD14N05SM9A onsemi
Buy Now Datasheet
Compare Parts:
RFD14N05SM9A onsemi N-Channel Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description TO-252AA, 3 PIN
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD14N05SM9A

This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MTD8N06E Freescale Semiconductor Check for Price TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TO-252AA RFD14N05SM9A vs MTD8N06E
RFD14N05SM Rochester Electronics LLC Check for Price 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN RFD14N05SM9A vs RFD14N05SM
MTD8N06E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 RFD14N05SM9A vs MTD8N06E
MTD10N05E Freescale Semiconductor Check for Price TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,10A I(D),TO-252AA RFD14N05SM9A vs MTD10N05E
MTD8N06E Motorola Mobility LLC Check for Price 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 RFD14N05SM9A vs MTD8N06E
Part Number Manufacturer Composite Price Description Compare
RFD14N05SM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN RFD14N05SM9A vs RFD14N05SM
RFD14N05SM9A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN RFD14N05SM9A vs RFD14N05SM9A
MTD3055E Texas Instruments Check for Price 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 RFD14N05SM9A vs MTD3055E
2SK2018-01S Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN RFD14N05SM9A vs 2SK2018-01S
RFD14N05SM9A Intersil Corporation Check for Price 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA RFD14N05SM9A vs RFD14N05SM9A
RFD14N05SM9A Harris Semiconductor Check for Price Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RFD14N05SM9A vs RFD14N05SM9A
SMD15N05 Temic Semiconductors Check for Price Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, RFD14N05SM9A vs SMD15N05

RFD14N05SM9A Related Parts

RFD14N05SM9A Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) of the RFD14N05SM9A is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material (TIM) to reduce thermal resistance.

  • The recommended gate drive voltage for the RFD14N05SM9A is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

  • Yes, the RFD14N05SM9A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.

  • To protect the RFD14N05SM9A from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.