Part Details for RFD14N05LSM9A by Harris Semiconductor
Overview of RFD14N05LSM9A by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for RFD14N05LSM9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 14A, 50V, 0.1ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 | 292 |
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$0.2562 / $0.3014 | Buy Now |
Part Details for RFD14N05LSM9A
RFD14N05LSM9A CAD Models
RFD14N05LSM9A Part Data Attributes
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RFD14N05LSM9A
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD14N05LSM9A
Harris Semiconductor
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD14N05LSM9A
This table gives cross-reference parts and alternative options found for RFD14N05LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD14N05LSM9A | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | Rochester Electronics LLC | RFD14N05LSM9A vs RFD14N05LSM9A |
| RFD14N05LSM9A | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05LSM9A vs RFD14N05LSM9A |
| RFD14N05LSM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | Rochester Electronics LLC | RFD14N05LSM9A vs RFD14N05LSM |
| RFD14N05LSM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD14N05LSM9A vs RFD14N05LSM |
| RFD14N05LSM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD14N05LSM9A vs RFD14N05LSM |
| SPD14N05 | Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Infineon Technologies AG | RFD14N05LSM9A vs SPD14N05 |
| STD16NE06L | 16A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STMicroelectronics | RFD14N05LSM9A vs STD16NE06L |
| SPD14N05 | Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | RFD14N05LSM9A vs SPD14N05 |