Datasheets
RFD14N05_NL by:

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN

Part Details for RFD14N05_NL by Fairchild Semiconductor Corporation

Overview of RFD14N05_NL by Fairchild Semiconductor Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for RFD14N05_NL

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RFD14N05_NL Part Data Attributes

RFD14N05_NL Fairchild Semiconductor Corporation
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RFD14N05_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-251AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD14N05_NL

This table gives cross-reference parts and alternative options found for RFD14N05_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD14N05_NL vs RFD14N05L
BUZ71L 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N05_NL vs BUZ71L
BUK553-60A TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors RFD14N05_NL vs BUK553-60A
MTP15N05EL 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N05_NL vs MTP15N05EL
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation RFD14N05_NL vs RFP14N05L
RFP14N05L 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFD14N05_NL vs RFP14N05L
RFD14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation RFD14N05_NL vs RFD14N06L
BUZ71L Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFD14N05_NL vs BUZ71L
MTP15N05EL 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi RFD14N05_NL vs MTP15N05EL
MTP15N05L Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFD14N05_NL vs MTP15N05L
Part Number Description Manufacturer Compare
HUFA76429D3ST_F085 60V, 20A, 20.5mΩ, DPAK N-Channel UltraFET®, TO-252 3L (DPAK), 5000-TAPE REEL onsemi RFD14N05_NL vs HUFA76429D3ST_F085
HUF75309D3ST_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation RFD14N05_NL vs HUF75309D3ST_NL
IRLZ24N Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG RFD14N05_NL vs IRLZ24N
NTD18N06G TRANSISTOR 18 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3, FET General Purpose Power onsemi RFD14N05_NL vs NTD18N06G
HUF76419D3S Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation RFD14N05_NL vs HUF76419D3S
HUFA76419D3ST N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ, DPAK-3 / TO-252-3, 2500-REEL, Automotive Qualified onsemi RFD14N05_NL vs HUFA76419D3ST
BUK7575-55A Power Field-Effect Transistor Nexperia RFD14N05_NL vs BUK7575-55A
AUIRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier RFD14N05_NL vs AUIRFR024NTR
PHB20N06T Power Field-Effect Transistor Nexperia RFD14N05_NL vs PHB20N06T
HUF75321D3ST N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, DPAK-3 / TO-252-3, 2500-REEL onsemi RFD14N05_NL vs HUF75321D3ST

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