Datasheets
RFD14N05 by:

14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN

Part Details for RFD14N05 by Rochester Electronics LLC

Overview of RFD14N05 by Rochester Electronics LLC

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Part Details for RFD14N05

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RFD14N05 Part Data Attributes

RFD14N05 Rochester Electronics LLC
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RFD14N05 Rochester Electronics LLC 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-251AA
Package Description TO-251AA, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD14N05

This table gives cross-reference parts and alternative options found for RFD14N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N05 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD14N05 vs RFD14N05
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD14N05 vs RFD14N05L
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens RFD14N05 vs BUZ71L
MTP15N05EL 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi RFD14N05 vs MTP15N05EL
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation RFD14N05 vs RFP14N05L
MTP15N05L Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFD14N05 vs MTP15N05L
MTP15N05EL 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N05 vs MTP15N05EL
STP20NE06L 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics RFD14N05 vs STP20NE06L
RFD14N05L 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD14N05 vs RFD14N05L
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi RFD14N05 vs RFD14N05L
Part Number Description Manufacturer Compare
MTD20N06HDLT4 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC RFD14N05 vs MTD20N06HDLT4
MTP15N06V 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N05 vs MTP15N06V
2SJ328-Z Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN NEC Electronics Group RFD14N05 vs 2SJ328-Z
IRFSZ34A Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Samsung Semiconductor RFD14N05 vs IRFSZ34A
BUZ101SL 20A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC RFD14N05 vs BUZ101SL
HUF76419D3 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC RFD14N05 vs HUF76419D3
MTD15N06V-1 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 Rochester Electronics LLC RFD14N05 vs MTD15N06V-1
IRFR4105TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier RFD14N05 vs IRFR4105TRPBF
HUF76423D3S 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD14N05 vs HUF76423D3S
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier RFD14N05 vs IRFZ24N

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