Datasheets
RFD10P03L by:

10A, 30V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for RFD10P03L by Intersil Corporation

Overview of RFD10P03L by Intersil Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for RFD10P03L

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RFD10P03L Part Data Attributes:

RFD10P03L Intersil Corporation
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RFD10P03L Intersil Corporation 10A, 30V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 110 ns

Alternate Parts for RFD10P03L

This table gives cross-reference parts and alternative options found for RFD10P03L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD10P03L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD10P03L Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD10P03L vs RFD10P03L
RFD10P03L Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation RFD10P03L vs RFD10P03L
Part Number Description Manufacturer Compare
RFD10P03L Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation RFD10P03L vs RFD10P03L
RFD10P03L Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD10P03L vs RFD10P03L

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