Part Details for RF1S9640SM by Fairchild Semiconductor Corporation
Overview of RF1S9640SM by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for RF1S9640SM
RF1S9640SM CAD Models
RF1S9640SM Part Data Attributes
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RF1S9640SM
Fairchild Semiconductor Corporation
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Datasheet
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RF1S9640SM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 790 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RF1S9640SM
This table gives cross-reference parts and alternative options found for RF1S9640SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S9640SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPB18P06P | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | RF1S9640SM vs SPB18P06P |
| SFW9Z24TM | Rochester Electronics LLC | Check for Price | 9.7A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | RF1S9640SM vs SFW9Z24TM |
| SFR9024TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | RF1S9640SM vs SFR9024TM |
| SFR9024 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | RF1S9640SM vs SFR9024 |
| FQD7P06TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | RF1S9640SM vs FQD7P06TM |
| SFW9Z24 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | RF1S9640SM vs SFW9Z24 |
| SFW9Z34 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | RF1S9640SM vs SFW9Z34 |
| SFR9014 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | RF1S9640SM vs SFR9014 |
| SPD08P05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | RF1S9640SM vs SPD08P05 |
| RFD8P06ESM | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RF1S9640SM vs RFD8P06ESM |