Part Details for RF1S540 by Harris Semiconductor
Overview of RF1S540 by Harris Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Price & Stock for RF1S540
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S540-ND
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DigiKey | 28A, 100V, 0.077 OHM, N-CHANNEL Min Qty: 249 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4101 In Stock |
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$1.2100 | Buy Now |
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Bristol Electronics | 12 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-262AA | 73 |
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$3.9000 / $9.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-262AA | 9 |
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$4.0194 / $5.4810 | Buy Now |
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Rochester Electronics | 28A, 100V, 0.077 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4101 |
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$1.0300 / $1.2200 | Buy Now |
Part Details for RF1S540
RF1S540 CAD Models
RF1S540 Part Data Attributes:
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RF1S540
Harris Semiconductor
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Datasheet
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RF1S540
Harris Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |