Part Details for RF1S50N06LE by Harris Semiconductor
Overview of RF1S50N06LE by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RF1S50N06LE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S50N06LE-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 281 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
5642 In Stock |
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$1.0700 | Buy Now |
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Rochester Electronics | N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 5642 |
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$0.9187 / $1.0800 | Buy Now |
Part Details for RF1S50N06LE
RF1S50N06LE CAD Models
RF1S50N06LE Part Data Attributes:
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RF1S50N06LE
Harris Semiconductor
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RF1S50N06LE
Harris Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 50 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 145 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |