Part Details for RF1S50N06 by Intersil Corporation
Overview of RF1S50N06 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for RF1S50N06
RF1S50N06 CAD Models
RF1S50N06 Part Data Attributes
|
RF1S50N06
Intersil Corporation
Buy Now
Datasheet
|
Compare Parts:
RF1S50N06
Intersil Corporation
50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 131 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RF1S50N06
This table gives cross-reference parts and alternative options found for RF1S50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UPA2702GR | Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 | NEC Electronics Group | RF1S50N06 vs UPA2702GR |
UPA1700A | Power Field-Effect Transistor, 7A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | NEC Electronics Group | RF1S50N06 vs UPA1700A |
IRF7460TR | Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | RF1S50N06 vs IRF7460TR |
UPA2701GR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 | NEC Electronics Group | RF1S50N06 vs UPA2701GR |
TPCA8005-H | TRANSISTOR 27 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | RF1S50N06 vs TPCA8005-H |
FDS6294 | 13A, 30V, 0.0113ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | RF1S50N06 vs FDS6294 |
TPC8003 | TRANSISTOR 13 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | RF1S50N06 vs TPC8003 |
UPA2700GR-A | Power Field-Effect Transistor, 17A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 | NEC Electronics Group | RF1S50N06 vs UPA2700GR-A |
UPA2702GR-A | Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8 | NEC Electronics Group | RF1S50N06 vs UPA2702GR-A |