Part Details for RF1S4N100SM by Intersil Corporation
Overview of RF1S4N100SM by Intersil Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Security and Surveillance
Internet of Things (IoT)
Telecommunications
Communication and Networking
Price & Stock for RF1S4N100SM
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | 48000 |
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RFQ |
Part Details for RF1S4N100SM
RF1S4N100SM CAD Models
RF1S4N100SM Part Data Attributes
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RF1S4N100SM
Intersil Corporation
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Datasheet
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RF1S4N100SM
Intersil Corporation
4.3A, 1000V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for RF1S4N100SM
This table gives cross-reference parts and alternative options found for RF1S4N100SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S4N100SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RF1S4N100SM | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | RF1S4N100SM vs RF1S4N100SM |