Datasheets
RF1S45N06LESM by:

45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Details for RF1S45N06LESM by Intersil Corporation

Overview of RF1S45N06LESM by Intersil Corporation

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Applications Security and Surveillance Internet of Things (IoT) Telecommunications Communication and Networking

Part Details for RF1S45N06LESM

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RF1S45N06LESM Part Data Attributes

RF1S45N06LESM Intersil Corporation
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RF1S45N06LESM Intersil Corporation 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 142 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RF1S45N06LESM

This table gives cross-reference parts and alternative options found for RF1S45N06LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S45N06LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1S45N06LESM Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation RF1S45N06LESM vs RF1S45N06LESM
Part Number Description Manufacturer Compare
IRF3710ZSPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier RF1S45N06LESM vs IRF3710ZSPBF
IRFR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier RF1S45N06LESM vs IRFR014PBF
IRL3705ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier RF1S45N06LESM vs IRL3705ZSPBF
MTP3N100 Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RF1S45N06LESM vs MTP3N100
IRFR014TRR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier RF1S45N06LESM vs IRFR014TRR
RFD14N05SM9A Power Field-Effect Transistor, Rochester Electronics LLC RF1S45N06LESM vs RFD14N05SM9A
MTP6N10 Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RF1S45N06LESM vs MTP6N10
IRFR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix RF1S45N06LESM vs IRFR014TRLPBF
MTD3055EL 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC RF1S45N06LESM vs MTD3055EL
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier RF1S45N06LESM vs IRFR014

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