Datasheets
RF1S42N03LSM by:

42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Details for RF1S42N03LSM by Intersil Corporation

Overview of RF1S42N03LSM by Intersil Corporation

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Applications Telecommunications

Part Details for RF1S42N03LSM

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RF1S42N03LSM Part Data Attributes

RF1S42N03LSM Intersil Corporation
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RF1S42N03LSM Intersil Corporation 42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for RF1S42N03LSM

This table gives cross-reference parts and alternative options found for RF1S42N03LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S42N03LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1S42N03LSM Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation RF1S42N03LSM vs RF1S42N03LSM
Part Number Description Manufacturer Compare
RFD20N03SM9A 20A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN Rochester Electronics LLC RF1S42N03LSM vs RFD20N03SM9A
RF1S640SM 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RF1S42N03LSM vs RF1S640SM
RFD16N06LESM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RF1S42N03LSM vs RFD16N06LESM
934056787127 75A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RF1S42N03LSM vs 934056787127
PSMN016-100PS 96A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RF1S42N03LSM vs PSMN016-100PS
MTB60N05HDL 60A, 50V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC RF1S42N03LSM vs MTB60N05HDL
IRFZ44ZSTRR Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S42N03LSM vs IRFZ44ZSTRR
IRFZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S42N03LSM vs IRFZ44ZS
IRLZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RF1S42N03LSM vs IRLZ44ZS
SUD06N10-225L-E3 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Vishay Siliconix RF1S42N03LSM vs SUD06N10-225L-E3

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