RF1S40N10LE by:

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Part Details for RF1S40N10LE by Fairchild Semiconductor Corporation

Overview of RF1S40N10LE by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy

Part Details for RF1S40N10LE

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RF1S40N10LE Part Data Attributes:

RF1S40N10LE Fairchild Semiconductor Corporation
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RF1S40N10LE Fairchild Semiconductor Corporation Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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