Datasheets
RF1K4915696 by:

6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

Part Details for RF1K4915696 by Intersil Corporation

Overview of RF1K4915696 by Intersil Corporation

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Applications Consumer Electronics

Part Details for RF1K4915696

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RF1K4915696 Part Data Attributes:

RF1K4915696 Intersil Corporation
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RF1K4915696 Intersil Corporation 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature MEGAFET
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.3 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RF1K4915696

This table gives cross-reference parts and alternative options found for RF1K4915696. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K4915696, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1K49156 Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor RF1K4915696 vs RF1K49156
RF1K49156 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation RF1K4915696 vs RF1K49156
RF1K4915696 Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor RF1K4915696 vs RF1K4915696
RF1K49156 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC RF1K4915696 vs RF1K49156
Part Number Description Manufacturer Compare
IRF7353D2 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RF1K4915696 vs IRF7353D2
IRF7353D2PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier RF1K4915696 vs IRF7353D2PBF
IRF7353D2UPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN International Rectifier RF1K4915696 vs IRF7353D2UPBF
RF1K4915696 Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor RF1K4915696 vs RF1K4915696
IRF7353D2TR Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RF1K4915696 vs IRF7353D2TR
RF1K49156 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC RF1K4915696 vs RF1K49156
RF1K49156 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation RF1K4915696 vs RF1K49156
RF1K49156 Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor RF1K4915696 vs RF1K49156

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