Part Details for RDN100N20 by ROHM Semiconductor
Overview of RDN100N20 by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Price & Stock for RDN100N20
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
RDN100N20
|
Avnet Americas | Transistor MOSFET N-Channel 200V 10A 3-Pin TO-220FN Bulk - Bulk (Alt: RDN100N20) Min Qty: 500 Package Multiple: 500 Container: Bulk | 0 |
|
RFQ |
Part Details for RDN100N20
RDN100N20 CAD Models
RDN100N20 Part Data Attributes
|
RDN100N20
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RDN100N20
ROHM Semiconductor
Power Field-Effect Transistor, 10A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |