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RD9.1P by:

Zener Diode,

Part Details for RD9.1P by Galaxy Microelectronics

Overview of RD9.1P by Galaxy Microelectronics

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Applications Space Technology Aerospace and Defense

Part Details for RD9.1P

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RD9.1P Part Data Attributes

RD9.1P Galaxy Microelectronics
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RD9.1P Galaxy Microelectronics Zener Diode,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
Configuration SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 15 Ω
JESD-30 Code R-PSSO-F3
Knee Impedance-Max 100 Ω
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard MIL-STD-202
Reference Voltage-Nom 9.1 V
Reverse Current-Max 0.5 µA
Reverse Test Voltage 6 V
Surface Mount YES
Technology ZENER
Terminal Form FLAT
Terminal Position SINGLE
Voltage Temp Coeff-Max 7 mV/°C
Voltage Tol-Max 6.08%
Working Test Current 5 mA

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