Part Details for RD12MVS1 by Mitsubishi Electric
Overview of RD12MVS1 by Mitsubishi Electric
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for RD12MVS1
RD12MVS1 CAD Models
RD12MVS1 Part Data Attributes:
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RD12MVS1
Mitsubishi Electric
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Datasheet
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RD12MVS1
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | CHIP CARRIER, R-XQCC-N3 | |
Pin Count | 10 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-XQCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |