Datasheets
RD12MVS1 by: Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

Part Details for RD12MVS1 by Mitsubishi Electric

Overview of RD12MVS1 by Mitsubishi Electric

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for RD12MVS1

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RD12MVS1 Part Data Attributes:

RD12MVS1 Mitsubishi Electric
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RD12MVS1 Mitsubishi Electric RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description CHIP CARRIER, R-XQCC-N3
Pin Count 10
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-XQCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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