Part Details for RD12MVP1 by Mitsubishi Electric
Overview of RD12MVP1 by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for RD12MVP1
RD12MVP1 CAD Models
RD12MVP1 Part Data Attributes:
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RD12MVP1
Mitsubishi Electric
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Datasheet
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RD12MVP1
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLATPACK, R-XQFP-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-XQFP-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for RD12MVP1
This table gives cross-reference parts and alternative options found for RD12MVP1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RD12MVP1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RD12MVS1-101 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Mitsubishi Electric | RD12MVP1 vs RD12MVS1-101 |