Datasheets
RD01MUS2B-T113 by: Mitsubishi Electric

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for RD01MUS2B-T113 by Mitsubishi Electric

Overview of RD01MUS2B-T113 by Mitsubishi Electric

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Price & Stock for RD01MUS2B-T113

Part # Distributor Description Stock Price Buy
Win Source Electronics   28585
  • 65 $0.8130
  • 150 $0.6670
  • 235 $0.6460
  • 320 $0.6250
  • 415 $0.6050
  • 555 $0.5420
$0.5420 / $0.8130 Buy Now

Part Details for RD01MUS2B-T113

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RD01MUS2B-T113 Part Data Attributes

RD01MUS2B-T113 Mitsubishi Electric
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RD01MUS2B-T113 Mitsubishi Electric Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Mitsubishi
Configuration SINGLE
Drain Current-Max (ID) 0.6 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.6 W
Surface Mount YES

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