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Part Details for RBN75H65T1FPQ-A0#CB0 by Renesas Electronics Corporation
Results Overview of RBN75H65T1FPQ-A0#CB0 by Renesas Electronics Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RBN75H65T1FPQ-A0#CB0 Information
RBN75H65T1FPQ-A0#CB0 by Renesas Electronics Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RBN75H65T1FPQ-A0#CB0
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
559-RBN75H65T1FPQ-A0#CB0-ND
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DigiKey | IGBT TRENCH 650V 150A TO-247A Min Qty: 1 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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$4.6076 / $7.7800 | Buy Now |
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DISTI #
RBN75H65T1FPQ-A0#CB0
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Avnet Americas | Transistor IGBT Chip 650V 150A 4-Pin TO-247A Tube - Trays (Alt: RBN75H65T1FPQ-A0#CB0) RoHS: Compliant Min Qty: 300 Package Multiple: 25 Lead time: 12 Weeks, 0 Days Container: Tray | 0 |
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$4.4550 | Buy Now |
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DISTI #
968-N75H65T1FPQA0CB0
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Mouser Electronics | IGBTs POWER TRS1 RoHS: Compliant | 0 |
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$4.5900 / $8.0300 | Order Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 300 Package Multiple: 25 Lead time: 12 Weeks Container: Tray |
0 Tray |
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$4.4600 | Buy Now |
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DISTI #
RBN75H65T1FPQ-A0#CB0
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Avnet Asia | Transistor IGBT Chip 650V 150A 4-Pin TO-247A Tube (Alt: RBN75H65T1FPQ-A0#CB0) RoHS: Compliant Min Qty: 300 Package Multiple: 25 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
RBN75H65T1FPQ-A0#CB0
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Avnet Silica | Transistor IGBT Chip 650V 150A 4Pin TO247A Tube (Alt: RBN75H65T1FPQ-A0#CB0) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
RBN75H65T1FPQ-A0#CB0
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EBV Elektronik | Transistor IGBT Chip 650V 150A 4Pin TO247A Tube (Alt: RBN75H65T1FPQ-A0#CB0) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for RBN75H65T1FPQ-A0#CB0
RBN75H65T1FPQ-A0#CB0 CAD Models
RBN75H65T1FPQ-A0#CB0 Part Data Attributes
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RBN75H65T1FPQ-A0#CB0
Renesas Electronics Corporation
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Datasheet
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Compare Parts:
RBN75H65T1FPQ-A0#CB0
Renesas Electronics Corporation
IGBT 650V 75A TO-247A Built-In FRD, TO-247A, /Tube
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | TO-247A | |
| Package Description | TO-247A, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | PRSS0003ZH | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.9 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 312 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 150 ns | |
| Turn-on Time-Nom (ton) | 56 ns | |
| VCEsat-Max | 2 V |