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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69AH2119
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Newark | Mosfet, Aec-Q101, N-Ch, 800V, 5A, To-263S Rohs Compliant: Yes |Rohm R8005ANJFRGTL Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 908 |
|
$1.6500 / $3.2100 | Buy Now |
DISTI #
R8005ANJFRGTLCT-ND
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DigiKey | MOSFET N-CH 800V 5A LPTS Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1848 In Stock |
|
$1.4438 / $3.0900 | Buy Now |
DISTI #
R8005ANJFRGTL
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Avnet Americas | Transistor MOSFET N-CH 800V ±5A 3-Pin TO-263 Emboss T/R - Tape and Reel (Alt: R8005ANJFRGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$1.5015 / $1.7094 | Buy Now |
DISTI #
755-R8005ANJFRGTL
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Mouser Electronics | MOSFET Nch 800V Vdss 5A ID TO-263(D2PAK), LPTS RoHS: Compliant | 21 |
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$1.4400 / $3.0900 | Buy Now |
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Future Electronics | MOSFET 1.2V Drive Pch MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$1.2600 / $1.3000 | Buy Now |
DISTI #
R8005ANJFRGTL
|
Avnet Americas | Transistor MOSFET N-CH 800V ±5A 3-Pin TO-263 Emboss T/R - Tape and Reel (Alt: R8005ANJFRGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
$1.5015 / $1.7094 | Buy Now |
DISTI #
R8005ANJFRGTL
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Avnet Silica | Transistor MOSFET N-CH 800V �5A 3-Pin TO-263 Emboss T/R (Alt: R8005ANJFRGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 31 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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R8005ANJFRGTL
ROHM Semiconductor
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Datasheet
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Compare Parts:
R8005ANJFRGTL
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-10-05 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 1.66 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 2.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |