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Transistors / Power Field-Effect Transistors / R8002KND3TL1
Datasheets
R8002KND3TL1 by: ROHM Semiconductor

Power Field-Effect Transistor, 1.6A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Part Details for R8002KND3TL1 by ROHM Semiconductor

Overview of R8002KND3TL1 by ROHM Semiconductor

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Price & Stock for R8002KND3TL1

Part # Distributor Description Stock Price Buy
DISTI # 15AJ3170
Newark Mosfet, N-Ch, 800V, 1.6A, To-252 Rohs Compliant: Yes |Rohm R8002KND3TL1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 63
  • 1 $1.5600
  • 10 $1.2800
  • 25 $1.1900
  • 50 $1.0900
  • 100 $0.9940
  • 250 $0.9180
  • 500 $0.8420
  • 1,000 $0.6860
$0.6860 / $1.5600 Buy Now
DISTI # 846-R8002KND3TL1CT-ND
DigiKey HIGH-SPEED SWITCHING NCH 800V 1. Min Qty: 1 Lead time: 30 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 406
In Stock
  • 1 $1.5000
  • 10 $1.2300
  • 100 $0.9566
  • 500 $0.8108
  • 1,000 $0.6605
  • 2,500 $0.6218
  • 5,000 $0.5922
  • 12,500 $0.5648
$0.5648 / $1.5000 Buy Now
DISTI # R8002KND3TL1
Avnet Americas Transistor MOSFET N-Channel 800V 1.6A 3-Pin TO-252 Embossed T/R - Tape and Reel (Alt: R8002KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.6675
  • 5,000 $0.6540
  • 10,000 $0.6404
  • 15,000 $0.6269
  • 20,000 $0.6134
  • 25,000 $0.5998
  • 250,000 $0.5863
$0.5863 / $0.6675 Buy Now
DISTI # 755-R8002KND3TL1
Mouser Electronics MOSFET NCH 800V 1.6A POWER MOSFET RoHS: Compliant 5322
  • 1 $1.5000
  • 10 $1.2300
  • 100 $0.9570
  • 500 $0.8280
  • 1,000 $0.6740
  • 2,500 $0.6350
  • 5,000 $0.6050
  • 10,000 $0.5640
$0.5640 / $1.5000 Buy Now
Future Electronics N-Channel 800 V 1.6A (Ta) 30W (Tc) Surface Mount TO-252GE RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2500 Lead time: 32 Weeks Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $0.8450
  • 15 $0.7650
  • 75 $0.7200
  • 250 $0.6850
  • 1,250 $0.6300
$0.6300 / $0.8450 Buy Now
DISTI # 62191362
Verical Trans MOSFET N-CH 800V 1.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Min Qty: 61 Package Multiple: 1 Date Code: 2101 Americas - 2070
  • 61 $1.4051
  • 100 $1.3423
  • 250 $1.2885
  • 500 $1.2419
  • 1,000 $1.2014
$1.2014 / $1.4051 Buy Now
DISTI # 60946070
Verical Trans MOSFET N-CH 800V 1.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Min Qty: 37 Package Multiple: 1 Date Code: 2149 Americas - 45
  • 37 $0.8538
$0.8538 Buy Now
Quest Components   1656
  • 1 $2.3680
  • 549 $0.9768
  • 1,025 $0.8880
$0.8880 / $2.3680 Buy Now
DISTI # R8002KND3TL1
TTI MOSFET NCH 800V 1.6A POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.6180
  • 5,000 $0.5850
  • 10,000 $0.5640
$0.5640 / $0.6180 Buy Now
Ameya Holding Limited   Min Qty: 1 100-Authorized Distributor
  • 1 $1.3916
  • 10 $1.2544
  • 100 $0.9722
  • 500 $0.8036
  • 1,000 $0.6341
  • 2,500 $0.5909
  • 5,000 $0.5566
$0.5566 / $1.3916 Buy Now
DISTI # R8002KND3TL1
Avnet Asia Transistor MOSFET N-Channel 800V 1.6A 3-Pin TO-252 Embossed T/R (Alt: R8002KND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # C1S625902002132
Chip1Stop High-speed Switching Nch 800V 1.6A Power MOSFET RoHS: Not Compliant pbFree: No Container: Cut Tape 45
  • 1 $1.0300
  • 10 $0.6870
$0.6870 / $1.0300 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 2070
  • 1 $1.6440
  • 10 $1.2330
  • 50 $0.8220
  • 100 $0.6570
  • 500 $0.6160
  • 1,000 $0.5920
$0.5920 / $1.6440 Buy Now

Part Details for R8002KND3TL1

R8002KND3TL1 CAD Models

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R8002KND3TL1 Part Data Attributes

Parametric Data
R8002KND3TL1 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R8002KND3TL1 ROHM Semiconductor Power Field-Effect Transistor, 1.6A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 4 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 4.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 4.8 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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