Part Details for R8002ANX by ROHM Semiconductor
Results Overview of R8002ANX by ROHM Semiconductor
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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R8002ANX Information
R8002ANX by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for R8002ANX
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AC9014
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Newark | Mosfet, N-Ch, 800V, 2A, To-220Fm-3, Transistor Polarity:N Channel, Continuous Drain Current Id:2A,... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.4500 / $1.6600 | Buy Now |
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DISTI #
R8002ANX-ND
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DigiKey | MOSFET N-CH 800V 2A TO220FM Lead time: 23 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
755-R8002ANX
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Mouser Electronics | MOSFETs 10V Drive Nch MOSFET RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks Container: Bulk |
0 Bulk |
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$1.0500 / $1.0800 | Buy Now |
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Quest Components | 432 |
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$1.3579 / $2.9360 | Buy Now | |
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Ameya Holding Limited | Min Qty: 1 | 10-Authorized Distributor |
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$1.8441 / $3.1680 | Buy Now RFQ |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 | 300 |
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$0.7340 / $1.9520 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 | 240 |
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$0.7340 / $1.9520 | Buy Now |
Part Details for R8002ANX
R8002ANX CAD Models
R8002ANX Part Data Attributes
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R8002ANX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R8002ANX
ROHM Semiconductor
Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | TO-220FM, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 0.265 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 4.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |