Part Details for R6547ENZ1C9 by ROHM Semiconductor
Overview of R6547ENZ1C9 by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for R6547ENZ1C9
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38607550
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Verical | Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247 Tube Min Qty: 10 Package Multiple: 1 Date Code: 2001 | Americas - 30 |
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$7.8578 / $8.2382 | Buy Now |
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Quest Components | 24 |
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$9.6219 / $11.7023 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 | 30 |
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$5.2010 / $7.6080 | Buy Now |
Part Details for R6547ENZ1C9
R6547ENZ1C9 CAD Models
R6547ENZ1C9 Part Data Attributes
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R6547ENZ1C9
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6547ENZ1C9
ROHM Semiconductor
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-10-05 | |
| Avalanche Energy Rating (Eas) | 1222 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 141 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |